1. Crystallography and Product Principles of Silicon Carbide
1.1 Polymorphism and Atomic Bonding in SiC
(Silicon Carbide Ceramic Plates)
Silicon carbide (SiC) is a covalent ceramic substance composed of silicon and carbon atoms in a 1:1 stoichiometric proportion, identified by its amazing polymorphism– over 250 well-known polytypes– all sharing strong directional covalent bonds but differing in piling series of Si-C bilayers.
The most technically appropriate polytypes are 3C-SiC (cubic zinc blende framework), and the hexagonal types 4H-SiC and 6H-SiC, each exhibiting subtle variations in bandgap, electron wheelchair, and thermal conductivity that affect their suitability for particular applications.
The strength of the Si– C bond, with a bond power of about 318 kJ/mol, underpins SiC’s extraordinary hardness (Mohs solidity of 9– 9.5), high melting point (~ 2700 ° C), and resistance to chemical degradation and thermal shock.
In ceramic plates, the polytype is commonly chosen based on the intended usage: 6H-SiC is common in structural applications as a result of its simplicity of synthesis, while 4H-SiC controls in high-power electronic devices for its remarkable fee provider movement.
The vast bandgap (2.9– 3.3 eV relying on polytype) additionally makes SiC an exceptional electric insulator in its pure type, though it can be doped to work as a semiconductor in specialized digital gadgets.
1.2 Microstructure and Stage Purity in Ceramic Plates
The efficiency of silicon carbide ceramic plates is critically dependent on microstructural features such as grain size, density, stage homogeneity, and the visibility of additional stages or contaminations.
Premium plates are usually produced from submicron or nanoscale SiC powders through sophisticated sintering techniques, causing fine-grained, totally thick microstructures that make best use of mechanical strength and thermal conductivity.
Impurities such as cost-free carbon, silica (SiO TWO), or sintering help like boron or light weight aluminum need to be thoroughly managed, as they can create intergranular films that reduce high-temperature strength and oxidation resistance.
Residual porosity, also at reduced levels (
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