1. Product Scientific Research and Structural Stability
1.1 Crystal Chemistry and Bonding Characteristics
(Silicon Carbide Crucibles)
Silicon carbide (SiC) is a covalent ceramic made up of silicon and carbon atoms set up in a tetrahedral lattice, largely in hexagonal (4H, 6H) or cubic (3C) polytypes, each displaying extraordinary atomic bond strength.
The Si– C bond, with a bond energy of around 318 kJ/mol, is among the best in structural ceramics, providing impressive thermal stability, firmness, and resistance to chemical strike.
This robust covalent network causes a product with a melting factor exceeding 2700 ° C(sublimes), making it one of the most refractory non-oxide porcelains offered for high-temperature applications.
Unlike oxide porcelains such as alumina, SiC preserves mechanical strength and creep resistance at temperature levels above 1400 ° C, where many steels and conventional ceramics start to soften or degrade.
Its low coefficient of thermal development (~ 4.0 × 10 ⁻⁶/ K) incorporated with high thermal conductivity (80– 120 W/(m · K)) makes it possible for rapid thermal biking without tragic cracking, an important attribute for crucible performance.
These innate properties stem from the balanced electronegativity and similar atomic sizes of silicon and carbon, which advertise an extremely steady and densely loaded crystal structure.
1.2 Microstructure and Mechanical Strength
Silicon carbide crucibles are commonly made from sintered or reaction-bonded SiC powders, with microstructure playing a crucial role in toughness and thermal shock resistance.
Sintered SiC crucibles are produced with solid-state or liquid-phase sintering at temperatures over 2000 ° C, typically with boron or carbon additives to enhance densification and grain border cohesion.
This procedure generates a totally thick, fine-grained structure with marginal porosity (
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